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Freescale Semiconductor Technical Data
Document Number: MRF7S19210H Rev. 0, 12/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain -- 20 dB Drain Efficiency -- 29% Device Output Signal PAR -- 5.9 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset -- - 33 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 190 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) * Typical Pout @ 1 dB Compression Point ] 190 Watts CW Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF7S19210HR3 MRF7S19210HSR3
1930 - 1990 MHz, 63 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465 - 06, STYLE 1 NI - 780 MRF7S19210HR3
CASE 465A - 06, STYLE 1 NI - 780S MRF7S19210HSR3
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS VDD Tstg TC TJ Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225 Unit Vdc Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 85C, 190 W CW Case Temperature 79C, 63 W CW Symbol RJC Value (2,3) 0.34 0.38 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF7S19210HR3 MRF7S19210HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 513 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1400 mAdc) Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 5.13 Adc) Dynamic Characteristics (2) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss -- -- -- 2.17 257 508 -- -- -- pF pF pF VGS(th) VGS(Q) VGG(Q) VDS(on) 1.2 -- 4 0.1 2 2.7 5.4 0.2 2.7 -- 7 0.3 Vdc Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 63 W Avg., f = 1932.5 MHz and f = 1987.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps D PAR ACPR IRL 18 26 5.5 -- -- 20 29 5.9 - 33 - 9.5 21.5 -- -- - 31 -6 dB % dB dBc dB
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued)
MRF7S19210HR3 MRF7S19210HSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic IMD Symmetry @ 160 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 60 MHz Bandwidth @ Pout = 63 W Avg. Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 190 W CW Average Group Delay @ Pout = 190 W CW, f = 1960 MHz Part - to - Part Insertion Phase Variation @ Pout = 190 W CW, f = 1960 MHz, Six Sigma Window Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) Symbol IMDsym Min Typ Max Unit MHz -- 15 -- Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 1930 - 1990 MHz Bandwidth
VBWres GF Delay G P1dB
-- -- -- -- -- -- --
50 0.9 0.95 2.82 28.9 0.019 0.008
-- -- -- -- -- -- --
MHz dB ns dB/C dBm/C
MRF7S19210HR3 MRF7S19210HSR3 RF Device Data Freescale Semiconductor 3
R1 VBIAS R2 Z20 C1 C2 C3 R3 Z19 Z2 Z3 Z4 Z5 C6 C4 C5 Z21 Z6 Z7 Z8 Z9 Z10
Z22 VSUPPLY + C10 C11 C12 C21
RF INPUT Z1
C16 Z11 Z12 Z13 Z14 Z15 C14 Z16 Z17
RF Z18 OUTPUT
DUT C13 Z23
C15
C17
+ C9 C8 C7 C18 C19 C20 C22
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12
0.126 x 0.066 Microstrip 0.584 x 0.079 Microstrip 0.110 x 0.079 Microstrip 0.133 x 0.079 Microstrip 0.059 x 0.118 Microstrip 0.059 x 0.118 Microstrip 0.197 x 0.102 Microstrip 0.860 x 0.551 Microstrip 0.114 x 0.551 Microstrip 0.129 x 1.102 Microstrip 0.304 x 1.102 Microstrip 0.295 x 0.276 Microstrip
Z13 Z14 Z15 Z16 Z17 Z18 Z19 Z20 Z21 Z22, Z23 PCB
0.078 x 0.102 Microstrip 0.319 x 0.102 Microstrip 0.709 x 0.220 Microstrip 0.709 x 0.220 Microstrip 0.747 x 0.066 Microstrip 0.227 x 0.066 Microstrip 0.145 x 0.090 Microstrip 0.548 x 0.090 Microstrip 0.734 x 0.090 Microstrip 1.044 x 0.100 Microstrip Taconic RF35, 0.030, r = 3.5
Figure 1. MRF7S19210HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S19210HR3(HSR3) Test Circuit Component Designations and Values
Part C1, C9, C11, C12, C19, C20 C2, C8 C3, C6, C7, C10, C14, C15, C18 C4 C5 C13 C16, C17 C21, C22 R1, R2 R3 Description 10 F, 50 V Chip Capacitors 100 nF Chip Capacitors 8.2 pF Chip Capacitors 0.2 pF Chip Capacitor 1.8 pF Chip Capacitor 0.4 pF Chip Capacitor 0.5 pF Chip Capacitors 470 F Electrolytic Capacitors 10 k, 1/4 W Chip Resistors 10 , 1/4 W Chip Resistor Part Number C5750X5R1H106M 12065C104KAT2A ATC100B8R2BT500XT ATC100B0R2BT500XT ATC100B1R8BT500XT ATC100B0R4BT500XT ATC100B0R5BT500XT 222212018471 WCR120610KFI WCR120610RFI TDK AVX ATC ATC ATC ATC ATC Vishay BC Components Welwyn Welwyn Manufacturer
MRF7S19210HR3 MRF7S19210HSR3 4 RF Device Data Freescale Semiconductor
C1 R1 R2
C2
C10 C11 C12 C3
C21
R3 C6 C4 C5
CUT OUT AREA
C13
C14 C15
C16 C17
C8 C9
C7 C18
C19 C20
C22
MRF7S19210H Rev 0
Figure 2. MRF7S19210HR3(HSR3) Test Circuit Component Layout
MRF7S19210HR3 MRF7S19210HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
Gps VDD = 28 Vdc, Pout = 63 W (Avg.) IDQ = 1400 mA D, DRAIN EFFICIENCY (%) 21 20.5 20 Gps, POWER GAIN (dB) 19.5 D 34 33 32 31 30 -31 -32 PARC ACPR (dBc) -33 -34 IRL ACPR -35 1980 2000 2020 -36 2040 IRL, INPUT RETURN LOSS (dB) -2 -4 -6 -8 -10 -12 -1.5 -2 -2.5 -3 -3.5 -4 PARC (dB)
19 Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 18.5 18 17.5 17 16.5 16 1880 1900
1920
1940
1960
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 63 Watts Avg.
22 21 Gps, POWER GAIN (dB) 20 19 18 1050 mA 17 700 mA 16 1 10 Pout, OUTPUT POWER (WATTS) CW 100 300 VDD = 28 Vdc f = 1960 MHz IDQ = 2100 mA 0 -10 -20 IM3-U -30 IM3-L -40 -50 -60 1 10 TWO-TONE SPACING (MHz) 100 IM7-L IM7-U IM5-U IM5-L VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1400 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz
1750 mA 1400 mA
IMD, INTERMODULATION DISTORTION (dBc)
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion Products versus Two - Tone Spacing
-25 -30 -35 -40 -45 -50 -55 ACPR (dBc)
20.5 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 20 Gps, POWER GAIN (dB) 19.5 19 18.5 18 17.5
1 0 -1 -2 -1 dB = 48.916 W -3 -4 -5 30 -2 dB = 68.142 W D VDD = 28 Vdc, IDQ = 1400 mA, f = 1960 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 40 50 60 70 80 90 Gps PARC ACPR
45 D, DRAIN EFFICIENCY (%) 40 35 -3 dB = 90.739 W 30 25 20 15 100 Pout, OUTPUT POWER (WATTS)
Figure 6. Output Peak - to - Average Ratio Compression (PARC) versus Output Power
MRF7S19210HR3 MRF7S19210HSR3 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
24 VDD = 28 Vdc, IDQ = 1400 mA, f = 1960 MHz Single-Carrier W-CDMA, 3.84 MHz 22 Channel Bandwidth 85_C TC = -30_C 25_C 20 Gps 18 16 14 12 1 D 10 100 Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF ACPR 25_C 85_C 10 -30_C 0 300 -35 -30_C 25_C 85_C 60 50 D, DRAIN EFFICIENCY (%) 40 30 20 -5 -10 -15 -20 -25 -30 ACPR (dBc) 190 210
Gps, POWER GAIN (dB)
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single - Carrier W - CDMA Power Gain, Drain Efficiency and ACPR versus Output Power
20 Gain 15 -2 MTTF (HOURS) 108 IRL (dB) 0 109
GAIN (dB)
10
-4
107
5 VDD = 28 Vdc Pout = 9 dBm IDQ = 1400 mA 1650 1750 1850
-6
0 -5 1550
IRL
-8
106
1950
2050
2150
2250
-10 2350
105 90 110 130 150 170 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 63 W Avg., and D = 29%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
Figure 9. MTTF versus Junction Temperature
MRF7S19210HR3 MRF7S19210HSR3 RF Device Data Freescale Semiconductor 7
W - CDMA TEST SIGNAL
100 10 -30 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 2 4 6 8 10 -50 -60 -70 -80 -90 -100 -110 -9 -7.2 -5.4 -3.6 -1.8 0 1.8 3.6 5.4 7.2 9 -ACPR in 3.84 MHz Integrated BW -ACPR in 3.84 MHz Integrated BW -40 -10 -20 3.84 MHz Channel BW
PEAK-TO-AVERAGE (dB)
Figure 10. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal
f, FREQUENCY (MHz)
Figure 11. Single - Carrier W - CDMA Spectrum
MRF7S19210HR3 MRF7S19210HSR3 8 RF Device Data Freescale Semiconductor
Zo = 5
f = 2040 MHz f = 2040 MHz Zsource Zload f = 1880 MHz f = 1880 MHz
VDD = 28 Vdc, IDQ = 1400 mA, Pout = 63 W Avg. f MHz 1880 1900 1920 1940 1960 1980 2000 2020 2040 Zsource W 5.20 - j1.02 4.90 - j1.00 4.60 - j0.92 4.31 - j0.82 4.04 - j0.71 3.80 - j0.56 3.58 - j0.42 3.38 - j0.30 3.19 - j0.16 Zload W 1.49 - j1.45 1.52 - j1.30 1.55 - j1.16 1.58 - j1.04 1.61 - j0.93 1.66 - j0.82 1.73 - j0.70 1.81 - j0.57 1.88 - j0.49
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance
MRF7S19210HR3 MRF7S19210HSR3 RF Device Data Freescale Semiconductor 9
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
60 59 Pout, OUTPUT POWER (dBm) 58 57 56 55 54 53 52 51 50 29 30 31 32 VDD = 28 Vdc, IDQ = 1400 mA, Pulsed CW 10 sec(on), 10% Duty Cycle, f = 1930 MHz 33 34 35 36 37 38 39 P1dB = 54.35 dBm (272 W) Actual P3dB = 55.27 dBm (337 W) Ideal Pout, OUTPUT POWER (dBm)
60 59 58 57 56 55 54 53 52 51 50 29 30 31 32 VDD = 28 Vdc, IDQ = 1400 mA, Pulsed CW 10 sec(on), 10% Duty Cycle, f = 1990 MHz 33 34 35 36 37 38 39 P1dB = 54.29 dBm (269 W) Actual P3dB = 55.25 dBm (335 W) Ideal
Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource P1dB 5.72 - j5.51 Zload 1.30 - j0.69 P1dB
Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource 6.20 + j1.19 Zload 1.09 - j046
Figure 13. Pulsed CW Output Power versus Input Power @ 28 V @ 1930 MHz
Figure 14. Pulsed CW Output Power versus Input Power @ 28 V @ 1990 MHz
MRF7S19210HR3 MRF7S19210HSR3 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
MRF7S19210HR3 MRF7S19210HSR3 RF Device Data Freescale Semiconductor 11
MRF7S19210HR3 MRF7S19210HSR3 12 RF Device Data Freescale Semiconductor
MRF7S19210HR3 MRF7S19210HSR3 RF Device Data Freescale Semiconductor 13
MRF7S19210HR3 MRF7S19210HSR3 14 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Dec. 2008 * Initial Release of Data Sheet Description
MRF7S19210HR3 MRF7S19210HSR3 RF Device Data Freescale Semiconductor 15
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MRF7S19210HR3 MRF7S19210HSR3
Rev. 16 0, 12/2008 Document Number: MRF7S19210H
RF Device Data Freescale Semiconductor

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